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RB481K
Diodes
Schottky Barrier Diode
RB481K
!Applications Low current rectification !External dimensions (Units: mm)
1.250.1 0.6 0.30.1 0.65 0.20.1 0.90.1 0.7 (1) (4)
1.250.1 2.10.1
(2) (3) 0.20.1 0.20.1 0.65 0.65 1.250.1 2.00.2 (1) (4) 0.150.05
0.1Min.
!Construction Silicon epitaxial planar
(2) (3)
ROHM : UMD4 EIAJ : SC - 82
!Absolute maximum ratings (Ta=25C)
Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature
60 Hz for 1
Symbol VRM VR IO IFSM Tj Tstg
Limits 30 30 0.2 1 125 -40~+125
Unit V V A A C C
!Electrical characteristics (Ta=25C unless otherwise noted)
Parameter Forward voltage Symbol VF1 VF2 VF3 VF4 Reverse current IR Min. - - - - - Typ. 0.18 0.25 0.34 0.40 3.6 Max. 0.28 0.33 0.43 0.50 30 Unit V V V V A IF=1mA IF=10mA IF=100mA IF=200mA VR=10V Conditions
3U
!Features 1) Compact size. 2) High reliability. 3) Extremely low forward voltage. 4) This is a composite component and is ideal for reducing the number of components used.
0~0.1
RB481K
Diodes
!Electrical characteristic curves (Ta=25C)
Ta=125C
FORWARD CURRENT : IF (A)
REVERSE CURRENT : IR (A)
100m 10m
Ta =
1m 75C 100 10 1 100n 10n 0 10 20 30 REVERSE VOLTAGE : VR (V) -25C 25C
CAPACITANCE BETWEEN TERMINALS : CT (pF)
1
10m
100
5
12
C
C
75
25
-2 5 C
C
1m 100 10 1 0 0.1
10
1 0 5 10 15 20 25 30 35 REVERSE VOLTAGE : VR (V)
0.2
0.3
0.4
0.5
0.6
FORWARD VOLTAGE : VF (V)
Fig. 1 Forward temperature characteristic
Fig. 2 Reverse temperature characteristic
Fig. 3 Capacitance between terminals characteristic

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